作　　者： ; ; ; ; ; ; ;

机构地区： 北京工业大学材料科学与工程学院新型功能材料教育部重点实验室

出　　处： 《稀有金属材料与工程》 2013年第12期2590-2593,共4页

摘　　要： 采用中频感应熔炼方法制备Ni-5at％W合金锭，经锻造和热轧后，再冷轧到50m长，厚度为60μm的带材。随后在800～1200℃进行再结晶退火处理。在兼顾“高织构”和“浅晶界”要求下，得出1100℃，0．5h是Ni5W合金基带最佳的退火工艺。根据X射线衍射（XRD）和电子背散射衍射技术（EBSD）结果，在1100℃／0．5h时该Ni5W合金基带的再结晶立方织构含量达到98．9％（≤10°），且晶粒尺寸均匀。退火后的Ni5W合金基带扫描半高宽（FWHM）值和孪晶界含量接近德国Dresden公司商业化Ni5W合金基带的水平。 A Ni-5at%W ingot was prepared by medium frequency induction melting. The ingot was forged, hot-rolled and cold-rolled into trips with 60 μm thickness and 50 m length. Recrystallization annealing for the substrate trip was carried out at different temperatures （800-1200 ℃） for different time. Taking account of high cube texture and shallow boundary, the recrystallization annealing of 1100 ℃/0.5 h is regarded as the best. According to X-ray diffraction and EBSD analyses, the cube grain content of the tape annealed at 1100 ℃ for 0.5 h reaches as high as 98.9% （tolerance angle of less than 10°）, and grain size is uniform. The FWHM values of the in-plane and the content of crystal twin are slightly different from that of the commercial Ni5W tape supplied by Germany Dresden.

关 键 词： 再晶界退火 立方织构 晶界 涂层导体

领　　域： [金属学及工艺]