作　　者： ; ; ; ; ; (周宁）;

机构地区： 华中科技大学光学与电子信息学院武汉光电国家实验室

出　　处： 《光学精密工程》 2013年第6期1434-1439,共6页

摘　　要： 纳米压印工艺中的压印胶在固化后会发生聚合物的铰链,生成高分子聚合物,很难被一般有机溶剂清除,从而影响器件的性能。为有效去除压印残胶,提出一种利用多层掩模去除残胶的方法。该方法首先在基片和压印胶之间沉积一层50nm的二氧化硅作为硬掩模;接着用纳米压印工艺将光栅图形转移到压印胶上,再用干法刻蚀将光栅图形转移到基片上;最后,放入BOE(buffered oxide etchant)中漂洗数秒以去除残胶。文中总结了刻蚀底胶时间对光栅占空比的影响,对比了经过多层掩模去残胶和传统去残胶的方法处理后的光栅形貌。电镜图片结果显示,采用本文方法经过漂洗的光栅表面残胶去除干净,形貌良好,其周期约为240nm,深度约为82nm。实验表明,多层掩模去残胶的方法不仅能够有效地去除刻蚀残胶,同时能够避免光栅形貌的损坏。 When UV-Nanoimprint Lithography（NIL） is used in manufacturing gratings of Distributed Feedback Laser Diodes（DFB LDs）, the resist often turns into a high polymer after curing and can not be eliminated completely. To eliminate the residual resist, a multi-mask layer process was demonstra- ted. In this process, a 50 nm SiOz hard mask was deposited between the wafer and the UV-curable re- sist and then traditional nanoimprint lithography based on soft stamp UV-imprinting was executed. Following that, the Inductively Coupled Plasma（ICP） dry etching was used to transfer the pattern on the substrate. Finally, it was rinsed with Buffered Oxide Etchant（BOE）for a few seconds . The effect of etching time on the duty ratio of grating was explored and the grating morphologies processed by traditional method and proposed method were compared. A scanning electron microscope image of rinsed grating shows that the grating with about 240 nm pitch and 82 nm depth o{fers a clean surface and a good feature. Therefore. The proposed method not only can eliminate the residual resist effec- tively but also can avoid the morphologic damage.

关 键 词： 纳米压印技术 分布反馈激光器 残胶 多层掩模 软模板

领　　域： [电子电信]