作　　者： ; ; ; ; ; ;

机构地区： 吉林师范大学信息技术学院

出　　处： 《光电子．激光》 2013年第1期11-15,共5页

摘　　要： 将光电材料硫化镉(CdS)薄层插入到结构为ITO/NPB/Rubrene/NPB/DPVBi/Alq3/LiF/Al的白光有机发光器件(OLED)的Alq3和LiF之间,研究了CdS对OLED性能的影响。结果表明,0.1nm厚的CdS插入Alq3和LiF之间的器件性能最好。器件电压从7 V变化到14 V时,色度均在白光的中心区域;当电压为7V时,器件的最大电流效率为9.09cd/A;当电压为14V时,器件的最大亮度为16 370cd/m2。不加CdS时,当电压为8V时,器件的最大效率为5.16cd/A;当电压为14V时,最大亮度为6 669cd/m2。加CdS的器件比不加CdS的器件最大效率提高了1.76倍,最大亮度提高了2.42倍。 Organic light-emitting diodes （OLEDs） have been gradually matured in panel displays and solid state lightings, such as portable electronic devices and OLED television. However,improving their luminance efficiency and stability for real applications remains a challenge. In this paper, we examine the electron injection performance in the OLED structure of ITO/NPB/Rubrene/NPB/DPVBi/Alq3/LiF/Al and apply the photoelectric material CdS as insertion layer between Alq3 and LiF for comparison. Results show that a 0. 3 nm-thick CdS layer inserted between Alq3 and LiF effectively enhances the performance of the device. Meanwhile,the CIE chromaticity coordinates of the devices are well whthin the white region when bias voltage changes from 7 V to 14 V. Furthermore,we investigate the influence of the thick ness of CdS thin film on performance of the device by taking the film thickness as 0.05 nm,0.1 nm, 0.3 nm,0. 5 nm and 0. 7 nm. These experimental results indicate when the thickness of the inserted CdS layer is 0. 1 nm, the greatest performance enhancement of the OLED can be obtained. The maximum current efficiency and luminance for the device with 0.1 nm-thick CdS insertion layer reach 9.09 cd/A at 7 V and 16 370 cd/m^2 at 14 V. respectively,which are enhanced to 1.76 times and 2.42 1time respectively. compared with the device without CdS insertion layer.

关 键 词： 硫化镉 薄层 有机电致白光器件 效率 亮度

领　　域： [电子电信]