作　　者： ; ; ;

机构地区： 广东工业大学材料与能源学院

出　　处： 《微电子学》 2012年第5期710-715,720,共7页

摘　　要： 随着CMOS工艺的发展,栅介质层厚度不断减薄,而电源电压并没有等比例缩小,导致栅漏电流不断增大,测量界面态的传统方法受到限制。介绍了电荷泵技术在表征深亚微米和超深亚微米器件Si/SiO2界面特性方面的应用;详述如何测量界面态和氧化层陷阱电荷的横向分布、能量分布和体陷阱深度分布;分析了当前电荷泵技术存在的问题和面临的挑战,提出通过抵消直接隧穿电流的影响,对电荷泵电流进行修正,使电荷泵技术能够在不同工艺下得到广泛应用。 With the development of CMOS technology,gate-oxide thickness has been scaled down,resulting in larger gate leakage current.The conventional methods is no longer fit for characterizing interface properties in ultra-thin gate-oxide MOSFET＇s.Charge pumping techniques to characterize Si/SiO2 interface properties for deep-submicron and ultra-deep-submicron device were dealt with,and methods to describe spatial and energy distribution of interface states and oxide trapped charges and to measure depth profile of bulk trapped charges was elaborated.Problems of charge pumping techniques and major challenges were discussed.A method was proposed to correct charge pump current by separating leakage current from Icp,which enabled charge pumping technique to be used for different processes.

关 键 词： 电荷泵 界面态 氧化层陷阱电荷 空间分布 能量分布

领　　域： [电子电信]