作　　者： ; ; ; ; ; ; ;

机构地区： 华南师范大学光电子材料与技术研究所

出　　处： 《物理学报》 2012年第13期518-526,共9页

摘　　要： 采用APSYS软件研究了InGaN/GaN量子阱垒层掺杂变化对双波长发光二极管发光光谱的调控问题.在不同掺杂类型和浓度下对器件电子空穴浓度分布、载流子复合速率、能带结构、发光光谱进行分析,结果表明,调节最了阱垒层n型和p型的掺杂浓度可以精确而有效地根据需要调控发光光谱,解决发光光谱调控难的问题.这些现象归因于掺杂的量子阱垒层对电子空穴分布的调控作用. Dual-wavelength LEDs with doped quantum well barriers of different doping concentrations are numerically investigated by using the APSYS simulation software. The carrier concentrations, radiative recombination rates, energy band diagrams and spectra are investigated at different doping types and different doping concentrations. The results show that through adjusting the doping concentration of the quantum well barrier a suitable spectrum can be obtained, which will satisfy the need of application. And the effect of spectrum-control in dual-wavelength LED is due to the blocking effect of electrons and holes by doped quantum well barriers.

关 键 词： 量子阱垒层 掺杂浓度 数值模拟 双波长发光二极管

领　　域： [理学] [理学]