作　　者： ; ; ; ; ; ;

机构地区： 中国科学院上海应用物理研究所

出　　处： 《核技术》 2012年第6期467-471,共5页

摘　　要： 采用动态屏蔽库仑势计算了T型半导体量子线的载流子自能,讨论了电子、空穴的自能及其对量子线截面尺度的依赖关系。计算结果表明,准一维体系具有很强的量子限域效应,显著增强了载流子间的有效库仑作用。受电子间强烈散射的影响,动态屏蔽导致了电子能带重整化及寿命的很大变化。与准静态近似计算结果相比,动态屏蔽效应对空穴的影响较小。 In this paper, we study dynamical screening effects in T-shaped semiconductor quantum wire by Green＇s Function theory at finite temperature. To clarify dynamical screening effects due to electron-hole plasma, the self-energy of T-shaped semiconductor quantum wire is calculated based on dynamically screened Coulomb potential. The energies of electron and hole, and the relation between the electron and hole energies and cross-section of quantum wire, are discussed. The results show that quasi-one-dimensional system has strong quantum confinement, which enhances the Coulomb interaction among carriers. Due to strong scattering among electrons, large band-gap renormalization effect and finite life-time of electrons are induced by dynamical screening effects. Compared to results by quasi static approximation, we find that holes are less affected by the dynamical screening effects.

关 键 词： 半导体量子线 量子限域 库仑作用 动态屏蔽效应 能带重整化

领　　域： [理学] [理学]