作　　者： ; ; ; ; ; ;

机构地区： 中国科学院上海应用物理研究所

出　　处： 《核技术》 2012年第5期390-394,共5页

摘　　要： 采用双带模型研究了掺杂半导体量子线中的量子限域效应及有效库仑作用。通过有限元方法数值求解复杂边界条件下薛定谔方程,获得了T型砷化镓量子线中载流子的单粒子波函数。载流子间的有效库仑作用通过包络函数近似获得。研究发现,重空穴量子限域效应强于电子,空穴间的有效库仑作用随控制电场增大,而电子间的有效库仑作用则减弱。电子与空穴间的有效库仑作用变化规律较为复杂,反映了电子与空穴的局域与离域性的相互竞争关系。 In this paper,we study the quantum confinement effect and effective Coulomb interaction in doped semiconductor quantum wire based on a two-band model.Single particle wave-function of carriers in T-shaped GaAs quantum wire can be obtained by finite-element solution of Schr dinger equation with complex boundary condition.The effective Coulomb interactions are calculated by using envelop function approximation.Due to their heavier mass,the quantum confinement effect of heavy holes is stronger than the electrons.The effective h-h Coulomb interaction increases with the intensity of electric field,while e-e Coulomb interaction decreases with increasing intensity of electric field.The e-h Coulomb interaction shows complicated dependency on electric field,which indicates competition of localization and delocalization characters in electron and hole.

关 键 词： 半导体量子线 电荷掺杂 量子限域 有效库仑势

领　　域： [理学] [理学]