作　　者： ;

机构地区： 韩山师范学院

出　　处： 《光谱实验室》 2012年第2期1188-1191,共4页

摘　　要： 采用射频等离子体增强化学气相沉积法(RF-PECVD),在玻璃和硅衬底上以230—310Pa之间的沉积气压生长微晶硅(μc-Si:H)薄膜。利用拉曼光谱和红外光谱分析样品的微结构。结果发现样品的微结构强烈依赖于沉积气压,并且存在着最佳沉积气压250Pa,在此条件下的微晶硅薄膜晶化率为60.6%,氢含量为最小值9.1%。 Microcrystalline silicon films on glass and silicon substrates were prepared by RF plasma enhanced chemical vapor deposition（RF-PECVD） technique in the gas pressure range of 230—310Pa,and microstructures of the samples were analyzed by Raman spectra and infrared spectra.The results showed that the microstructure of the samples strongly depended on the gas pressure with the optimal sedimentary gas pressure at 250Pa,under the conditions,the crystalline volume rate reached 60.6%,while the content of hydrogen reduced to minimum value of 9.1%.

关 键 词： 微晶硅薄膜 沉积气压 拉曼光谱 傅里叶变换红外透射谱

领　　域： [理学] [理学] [理学] [理学]