作　　者： ; ; ; ;

机构地区： 福建农林大学机电工程学院

出　　处： 《电子元件与材料》 2012年第2期33-35,39,共4页

摘　　要： 采用磁控溅射法在Si(100)衬底上制备了掺碳氧化铟(In2O3:C)薄膜,溅射过程分别在衬底温度为室温和550℃的条件下进行。通过测试所制In2O3:C薄膜的XRD谱和磁化曲线,研究了In2O3:C薄膜的结构和铁磁性能,并探讨了其铁磁性的起源。结果显示,随着含碳量的增加,In2O3:C薄膜的饱和磁化强度先增大后减小;此外,氧空位缺陷浓度高的样品其铁磁性也更强,这表明氧空位缺陷与In2O3:C薄膜的铁磁性起源有直接的关系。 Carbon-doped In2O3 （In2O3：C） thin films were prepared on Si （100） substrates by magnetron sputtering technique. The deposition progresses were carried out at substrate temperatures of room temperature and 550℃, respectively. The structure and ferromagnetic properties of prepared In2O3：C thin films were characterized by XRD and magnetization curves, and the origin of ferromagnetism of In2O3：C thin films was discussed accordingly. The results show that, with the increasing of carbon concentration, the saturation magnetization of In2O3：C thin films increases first, and then decreases; in addition, the ferromagnetic signals are found stronger in those samples with higher concentration of oxygen vacancy, which suggests that the origin of ferromagnetism is directly related to the oxygen vacancies in In2O3：C thin films.

关 键 词： 稀磁半导体 掺碳氧化铟 铁磁性 薄膜

领　　域： [电子电信]