作　　者： ;

机构地区： 韩山师范学院

出　　处： 《光谱实验室》 2012年第1期537-540,共4页

摘　　要： 采用射频等离子体增强化学气相沉积(RF-PECVD)技术,在硅衬底上以不同的射频功率生长微晶硅(μc-Si:H)薄膜,利用傅里叶变换红外透射光谱技术对薄膜进行测试。通过对红外透射光谱的高斯拟合分析,结果表明薄膜中的氢含量和硅氢键合模式跟射频功率密切相关;当射频率从30W增加到110W时,薄膜中的氢含量先减少后慢慢增加,而结构因子逐渐增加后再减小,并且硅氢键合模式由以SiH为主转变为以SiH_2为主。并讨论了这些参量随射频功率变化的机理。 Microcrystalline silicon films on silicon substrates were prepared by RF plasma enhanced chemical vapor deposition（RF-PECVD） technique at different RF-power,which were analyzed by Fourier transform infrared spectroscopy.The results show that the hydrogen content and the silicon-hydrogen bonding configurations of the films are closely related to the RF-power,when the RF-power increased from 30W to HOW,the hydrogen content reduce first and then increase gradually,while the trend of the structural gene is on the contrary,and the major Si-H bonding configuration changes from SiH to SiH_2.The mechanism of change of the parameters along with the RF-power is discussed.

关 键 词： 微晶硅薄膜 射频功率 傅里叶变换红外透射谱

领　　域： [理学] [理学]