作　　者： ; ; ; ; ; (彭冬香）;

机构地区： 四川大学物理科学与技术学院辐射物理及技术教育部重点实验室

出　　处： 《四川大学学报（自然科学版）》 2011年第6期1386-1390,共5页

摘　　要： 常温下采用反应射频磁控溅射方法在玻璃基底上制备出(002)单一择优取向柱状结构的氮化铝薄膜,通过XRD分析发现溅射功率为80W、溅射气压为0.20 Pa、氮气与氩气比为5%时,氮化铝(002)晶体衍射峰最强,通过FESEM表面及截面分析表明在此条件下得到的氮化铝薄膜表面较平整、致密性较好. The AIN thin films with the（002）preferred orientation of columnar structure were deposited on glass substrate by RF reactive magnetron sputtering method. The AIN（002）diffraction peak intensities were analyzed by X-ray diffraction （XRD）. It shows that the diffraction peak is strongest when the sputtering power, sputtering pressure and nitrogen argon ratio are 80 W, 0.20 Pa and 5 %, respectively. Otherwise, it also demonstrates through FESEM on the surface and cross section that the AIN films in this conditions are more smooth and more density.

关 键 词： 薄膜 射频反应磁控溅射 择优取向 沉积速率

领　　域： [电子电信]