作　　者： ; ; ; ; ; ;

机构地区： 广东工业大学材料与能源学院

出　　处： 《人工晶体学报》 2011年第5期1261-1265,共5页

摘　　要： 本文通过在ZnO靶材上放置高纯Mg片,运用射频磁控溅射法在普通玻璃衬底上制备了Zn1-xMgxO(x=0.1,0.16,0.18,0.24)薄膜。用X射线衍射仪、扫描电镜、紫外-可见-分光光度计等研究了Zn1-x MgxO薄膜的组织结构和性能。结果表明:Zn1-xMgxO薄膜呈ZnO的纤锌矿结构,在ZnO晶格中Mg2+有效地替代了Zn2+。样品表面比较平整,颗粒均匀致密,薄膜质量较高,且在可见光范围内光透过率均为90%左右,具有极好的透光性;此外,随着Mg掺入量的增多,Zn1-xMgxO薄膜的吸收边出现蓝移现象,实现了对禁带宽度的调节。 Zn1-xMgxO（x=0.1,0.16,0.18,0.24） thin films were deposited on common glass substrates by RF magnetron sputtering technology with ZnO target which was placed on high-purity Mg thin pieces.The structure,surface morphology and optical properties of the films were characterized by XRD,SEM and transmittance measurements.It was found that all the Zn1-xMgxO films showed ZnO wurtzite structure,which indicated that the Zn2＋ were successfully substituted by Mg2＋ in the ZnO lattice.The surface of samples was smooth,and the grains were homogeneous and compact.The average transmittance of all the films for the visible wavelength region was about 90%.As Mg content increasing,the blue shift of absorption edge of Zn1-xMgxO thin films was observed,which meant that Zn1-xMgxO thin film could adjust the band gaps.

关 键 词： 射频磁控溅射 薄膜 禁带宽度

领　　域： [理学] [理学]