机构地区: 韩山师范学院
出 处: 《红外技术》 2011年第9期509-511,共3页
摘 要: 采用等离子体增强化学气相沉积系统制备非晶碳化硅薄膜,通过控制反应气体中甲烷和硅烷的流量比R来调节薄膜中的碳/硅比,获得具有不同碳/硅比的薄膜结构。采用Raman、XPS以及FT-IR等技术手段对样品的结构进行表征。通过对样品吸收谱的测量,对样品的光学特性进行了研究。研究结果表明,薄膜中C-H键以及Si-C键含量的增加引起薄膜的光学带隙展宽,在R=10时薄膜的光学带隙达到2.4 eV。 A series of hydrogenated amorphous silicon carbide thin films with different C/Si ratio were fabricated using plasma-enhanced chemical vapor deposition system by changing the ratio of methane and silane.The changes of microstructures were characterized by the Raman,X-ray photoelectron spectroscopy(XPS) and Fourier-transform infrared(FT-IR) spectra.It was found that the optical band gap of the film becomes wider as the C-H bond and Si-C bond content increase,and it reaches as high as.2.4 eV when the ratio of methane and silane is 10.