作　　者： ; ; ; ; ; ;

机构地区： 深圳大学物理科学与技术学院

出　　处： 《物理学报》 2011年第9期746-751,共6页

摘　　要： 本文采用离子束溅射Bi/Te和Sb/Te二元复合靶,直接制备n型Bi2Te3热电薄膜和p型Sb2Te3热电薄膜.在退火时间同为1h的条件下,对所制备的Bi2Te3薄膜和Sb2Te3薄膜进行不同温度的退火处理,并对其热电性能进行表征.结果表明,在退火温度为150℃时,制备的n型Bi2Te3热电薄膜的Seebeck系数最大,为-148μVK-1,功率因子也达到最大,为0.893×10-3Wm-1K-2;在退火温度为200℃时,制备的p型的Sb2Te3热电薄膜的Seebeck系数为+117μVK-1,功率因子达到最大,为0.797×10-3Wm-1K-2.因此,本文分别选取了150℃退火温度下制备的Bi2Te3薄膜和退火温度为200℃下制备的Sb2Te3薄膜作为薄膜温差单体电池的p型和n型薄膜层.结果表明,在冷热端温差为50K的条件下,薄膜温差单体电池的输出电压为15.26mV,最大的输出功率为0.129μW. In this paper, N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films are deposited by ion beam sputtering with Bi/Te and Sb/Te binary compound target. Sb2Te3 thin films and Bi2Te3 thin films are annealed at different annealing temperatures for 1 h and their thermoelectric properties are characterized. When the annealing temperature is 150 ℃, both the Seebeck coefficient and power factor of the Bi2Te3 thin films have maximal values of -148 μVK-1 and 0.893×10-3 Wm-1K-2 respectively. Sb2Te3 thermoelectric thin film has a seebeck coefficient of 117 μVK-1 and a maximal power factor of 0.797×10-3 Wm-1K-2 when the annealing temperature is 200 ℃. Therefore, Sb2Te3 thin films at the annealing temperature of 200 oC and Bi2Te3 thin films at the annealing temperature of 150 ℃ are selected to fabricate the single thin film thermoelectric generation. When the temperature difference between the cold side and the heat side is 50K, the output voltage of the single thin film thermoelectric generation is 15.26 mV and the maximal output power is 0.129 μW.

关 键 词： 薄膜温差电池 薄膜 薄膜 离子束溅射

领　　域： [理学] [理学]