作　　者： ; ; ;

机构地区： 滁州学院电子信息工程系

出　　处： 《山东科技大学学报（自然科学版）》 2011年第4期95-98,104,共5页

摘　　要： 通过二维器件模拟软件MEDICI对小尺寸硅SRAM单元SEU特性进行了分析。在阱内外碰撞时,当耦合电阻,NMOS阱深等因素变化时,SRAM单元的SEU特性将发生变化,器件阱外碰撞一直比阱内碰撞时对SEU敏感。参数变化过程中对阱内外碰撞时器件SEU敏感性的影响情况不同,器件阱外碰撞时参数变化对SEU特性影响较小,但器件阱内碰撞时参数变化对SEU特性影响较大。 The analysis of the SEU characteristics of small dimension silicon SRAM was made by means of 2 D device simulation software MEDICI.When the coupling resistance,trap depth of NMOS and other factors are changed,the SEU characteristics of SRAM change in strikes outside or inside the traps.The device is more sensitivity with strike inside the trap than that outside the trap.The impact of strikes outside or inside the traps on SEU sensitivity of devices is different in the process of parameters variation.The impact of strike outside the trap on SEU sensitivity of device is smaller when parameters vary,but the impact of strike inside the trap on SEU sensitivity of device is greater when parameters vary.

关 键 词： 单粒子翻转 线能量传输 耦合电阻 阱内碰撞 阱外碰撞

领　　域： [电子电信]