作　　者： ; ;

机构地区： 深圳大学光电工程学院光电子器件与系统教育部重点实验室

出　　处： 《现代电子技术》 2011年第16期179-182,共4页

摘　　要： 为了探讨DMQA掺杂浓度对有机发光器件（OLEDs）光电性能的影响,采用器件结构ITO/PEDOT：PSS/TPD/Alq3：DMQA/LiF/Al,在0.28~4.5 wt%范围内改变DMQA的掺杂浓度,考察了器件的光电性能变化。结果显示,随着升高DMQA掺杂浓度,器件表现为电流略有下降,说明DMQA对载流子传输起阻挡或者陷阱作用;器件发光效率下降明显,说明DMQA分子间作用力较强,存在浓度淬灭效应,而且,器件发光光谱在570~610 nm区间存在肩峰,其强度随着DMQA浓度增加逐步增大,据此推断该肩峰来自于DMQA激基缔合物发射。 To study the influence of DMQA concentration on the performance of OLEDs,the devices of ITO/PEDOT： PSS/TPD/Alq3： DMQA/LiF/Al with the doping ratio ranging from 0.28 wt% to 4.5 wt% were investigated.When increasing the DMQA concentration,three phenomena were observed： the current characteristics decreased slightly,which indicated that DMQA played functions as blocking or trapping carriers transport;but electroluminescence efficiency decreased obviously,which suggested a strong inter-molecular interaction among DMQA that leaded to the exciton quenching;moreover,a gradually enhanced shoulder emission ranging from 570 nm to 610 nm,which was inferred come from excimer emission of DMQA,was also found in device.

关 键 词： 有机电致发光器件 浓度淬灭 激发双体发射

领　　域： [电子电信]