作　　者： ; ; ; ;

机构地区： 上海交通大学微纳米科学技术研究院微米纳米加工技术国家级重点实验室

出　　处： 《真空科学与技术学报》 2011年第4期419-423,共5页

摘　　要： 提出用铝取代银作为寻址电极,氧化铝取代玻璃粉作为其上介质层的新型等离子体显示器(PDP)电极单元,对单项工艺进行了优化,并形成了完整可行的整体工艺路线,有望为PDP生产成本的降低提供一条新的技术途径。选用非连续磁控溅射和光刻-刻蚀工艺制备铝电极,阳极氧化工艺制备氧化铝介质层。用扫描电子显微镜对铝膜、氧化铝介质层及电极单元的整体形貌进行了表征;分别对所制备的铝电极的导电性能和氧化铝介质层的耐击穿性能进行了测定,结果表明在优化的实验条件下铝电极电阻率可以达到5.0×10-8Ω·m,氧化铝耐击穿强度大于100 V/μm,完全可以满足实际应用的技术要求。 The patterned Al film electrodes and alumina dielectric layers were grown either by magnetron sputtering or by vacuum deposition,followed by anodic oxidation to significantly reduce the cost of silver paints and eutectic glass powder,widely used in fabrication of plasma display panel（PDP）.The microstructures of Al film electrode,Al2O3 layers,as well as the morphology of the PDP cells fabricated by lithography,were characterized with scanning electron spectroscopy.The impacts of the growth conditions on microstructures of the films were studied.The electric properties of the Al electrode,Al2O3 dielectric layers and the prototyped PDP cells were evaluated also.The results show that the Al electrode and Al2O3 layers may work pretty well in a PDP cell.For instance,the resistivity of Al film and the dielectric strength of alumina layers were found to be 5.0×10-8 Ω·m and 100 V/μm,respectively.

关 键 词： 等离子体显示器 寻址电极 氧化铝介质层 磁控溅射 阳极氧化

领　　域： [电子电信] [电子电信]