作　　者： ; ; ; ; ; ; (陈猛）;

机构地区： 中国科学院上海冶金研究所

出　　处： 《金属学报》 1999年第9期934-938,共5页

摘　　要： 对掺锡三氧化铟（Sn－dopedIn2O3，简称ITO）薄膜光学特性进行了研究结果表明，该薄膜在可见光区具有高的透射率；低电阻率的ITO薄膜在红外区的的反射率随薄膜方块电阻的减小而增大，表现出类金属性质，ITO薄膜的电磁本构特性参数光学折射率n和消光系数k在450－800nm区间的色散很弱，基于对薄膜光学吸收边附近吸收系数的线性拟合表明，薄膜在K＝0处价带至导带的跃迁是禁戒跃迁。 The optical properties of ITO films were investigated. High transparent Sn-doped In2O3films (ITO) have been obtained in visible region. It was indicated that the reflectance of ITO film in IRregion shows strong dependence on film square resistance. The electromagnet constitutive characteristics,n and k, show slight dispersion at the wavelength range of 450 -800 nm. Linear simulation on absorptancenear optical absorption edge of the film indicates that the transition from valance band to conduction bandat K=0 is a forbidden transition.

关 键 词： 薄膜 红外反射率 光学特性

领　　域： [理学] [理学] [电子电信]