作　　者： ; ; (林金平）;

机构地区： 国核工程有限公司上海200233

出　　处： 《腐蚀与防护》 2011年第6期455-457,462,共4页

摘　　要： 采用电化学测试法研究了微量镓（0．02％～0．06％Ga，质量分数，下同）的添加对4N精铝在5％NaCl溶液中的耐蚀性能。结果表明，随着Ga含量的增加，精铝的开路电位和点蚀电位朝着负方向移动，腐蚀速率和点蚀发生系数增大；电化学阻抗谱结果表明，随着Ga含量的增加，精铝的氧化膜电阻减小，材料耐蚀性降低；当Ga含量低于0．03％时，Ga对精铝的耐蚀性的影响较小。因此，精铝中的Ga含量应控制在0．03％以下。 The effect of trace amount Ga （0. 02% to 0. 06%） on the corrosion behavior of pure A1 （99.99%, 4N） in NaC1 solution was investigated by potentiodynamie polarization technique and EIS. The results showed that the open circuit corrosion potential and pitting potential of A1 shifted to active （negative） direction with the increase of Ga content, while the corrosion rate and pitting occurrence factor increased. From EIS test, the calculated results showed that the resitivity of oxide film on pure Al decreased with the increase of Ga content. The effect of Ga on the degradation of corrosion resistance was rather small when the Ga content was below 0. 03%. The Oa content should be kept less than O. 03% in the pure Al.

关 键 词： 合金 极化曲线 阻抗测试 点蚀

领　　域： [金属学及工艺] [金属学及工艺]