作　　者： ; ;

机构地区： 华中理工大学光电子工程系

出　　处： 《Journal of Semiconductors》 1999年第12期1098-1101,共4页

摘　　要： 研制了１．５５μｍ 波段低偏振灵敏度的半导体光放大器（ＳＯＡ）．其有源区材料采用张应变和压应变交替排列的混合应变量子阱结构，由ＭＯＣＶＤ生长．张应变量子阱加强了ＴＭ 模式的增益，改善了ＳＯＡ 的偏振灵敏度．腔长为４００μｍ 的单端耦合ＳＯＡ，在１６０ｍ Ａ 偏置下，增益大于１６ｄＢ，偏振灵敏度约为１．８ｄＢ． Semiconductor optical amplifier (SOA) with low polarization sensitivity in 1\^55μm waveband is reported in this paper. The active layer of SOA grown by MOCVD, is made of tensile and compress strained quantum wells. The polarization sensitivity of SOA is improved for the gain of TM mode is enhanced by tensile strained quantum wells. Under bias current of 160mA, the SOA with 400μm cavity length and coupled to fiber in one facet performed more than 16dB gain and as low as 1\^8dB polarization sensitivity. PACC:7340L, 4255P

关 键 词： 半导体光放大器 偏振灵敏度 量子阱材料

领　　域： [电子电信]