作　　者： ; ;

机构地区： 中国科学技术大学物理学院物理系

出　　处： 《物理学报》 1999年第8期1509-1513,共5页

摘　　要： 在薄膜生长的成核阶段，稳定聚集体将逐渐覆盖衬底表面．同时，薄膜的生长将发生在被覆盖的衬底部分，而成核则发生在未被覆盖的部分．本文研究了衬底表面被覆盖的程度对薄膜成核和生长的影响，对广泛应用的薄膜理论，给出一些修正公式．结果表明，成核速率正比于衬底表面未被覆盖面积的平方．而薄膜理论认为成核速率是时间常量，似显得粗糙． In nucleation process of thin film growth, stable clusters will gradually cover substrate surface. The growth will occur in the covered parts of substrate, and the nucleation will proceed in the uncovered parts. In this paper, we investigate the influence of coverage on nucleation and growth of thin films and give a series of revised formulae for the widely used theory of thin film growth. We get that the nucleation rate is proportional to the square of uncovered area. It looks rough that the nucleation rate is considered to be a constant in thin film theories. PACC: 6855

关 键 词： 薄膜生长 成核 衬底表面覆盖

领　　域： [理学] [理学] [一般工业技术]