作　　者： ; ;

机构地区： 宝钢集团有限公司

出　　处： 《变频器世界》 2011年第3期114-117,共4页

摘　　要： 绝缘栅双极晶体管IGBT兼有功率三极管(GTR)和场效应管(MOSFET)的优点,在电子技术、电气传动、开关电源等场合有着广泛的应用。实际使用时,由于装置设计和应用时的意外原因,IGBT可能发生短路,急剧增大的集电极电流将造成器件永久性破坏。IGBT过电流的能力极差,快熔很难起到保护作用,因此现代IGBT模块内部一般都设有电流限制电路,回路中快熔的作用主要是防止故障的扩大化。因此,快熔的选择应该主要从具有足够分断故障电流的能力并兼顾快熔使用寿命等方面考虑选型。否则一旦系统发生过电流快熔分断能力不足会导致快熔燃爆,反而导致故障的扩大。 Isolated Gate Bipolar Transistor（IGBT） has the feature of GTR and MOSFET. It is applied in the electric, drive system and switch power etc. It is probabily work in the short circuit and bears the over current. It must be destroyed forever by the large impact current of collector. IGBT behaves extremely worse when it is in the case of over current. Commonly, there is a electric circuit to limit the current in the modern modules of IGBT. Mostly designers use fast speed breaking fuses in the IGBT circuit yet, only to prevent the failure accident more worse. Although the current protection is executed by the module of IGBT, the designers must select the correct fast speed breaking fuses, mainly accord- ing to more longer life and more larger volume of breaking short circuit current. Otherwise the failure accident will become more serious, once there is over current accident in the circuit and the fast speed breaking fuses can not provide enought volume of over current.

关 键 词： 快熔 擎住效应 过电流 分断能力

领　　域： [金属学及工艺]