作　　者： ; ; ; ; ;

机构地区： 武汉大学物理科学与技术学院

出　　处： 《功能材料》 2011年第3期421-424,共4页

摘　　要： 采用sol-gel法在Pt/Ti/SiO2/Si衬底上成功制备出纯BiFeO3(BFO)和Ce、V共掺杂Bi0.97Ce0.03Fe1-xVxO3(x=0,0.01,0.02,0.03)(BCFVx)薄膜。结构和形貌测试表明,Ce、V共掺杂使得BFO薄膜发生从菱方结构到伪四方结构的转变,且薄膜晶粒变小。介电性能和漏电流测试表明,Ce、V共掺杂BFO薄膜的介电常数增大,介电损耗和漏电流密度减小。铁电性能测试表明在x=0.01时,BCFV 0.01薄膜具有较好矩形度的电滞回线,表现出较好的铁电性能。 Pure,Ce^3^＋ and V^5^＋ co-doped multiferroic BiFeO3 thin films,BiFeO3（BFO） and Bi0.97Ce0.03Fe1-xVxO3（x=0,0.01,0.02,0.03）（BCFVx）,were successfully prepared on Pt/Ti/SiO2/Si substrates by sol-gel technique.The structures and the surface morphologies measurements revealed a gradual phase transition from a rhombohedral to a pseudotetragonal structure and decreased grain sizes in the Ce and V co-doped BFO films.The dielectric property and leakage current density measurements indicated a large increase in the dielectric constanct and greatly decreases in the dielectric loss and the leakage current density in the Ce and V co-doped BFO films.Improved ferroelectric properties were obtained in the BCFVx films of x=0.01 with a well squared-shaped P-E hysteresis loop.

关 键 词： 技术 离子掺杂 铁电性能 漏电流

领　　域： [理学] [理学] [理学] [理学]