机构地区: 滁州学院电子信息工程系
出 处: 《电子质量》 2011年第2期14-16,共3页
摘 要: 使用软件模拟的方法对NMOS和PMOS的单粒子翻转(SEU)特性进行仿真,通过在阱内外碰撞的两种情况下对小尺寸NMOS和PMOS的SEU敏感性进行对比可知,对于深亚微米阶段相同工艺的器件,在阱外碰撞时,NMOS一定比PMOS对SEU敏感;但对于阱内碰撞,NMOS和PMOS对SEU的敏感性要视具体情况而定。 Using the computer simulation method to investigate SEU characteristics of NMOS and PMOS,though compared the sensitivity of small dimension NMOS and PMOS in two situation——outside-the-well strike and inside-the well strike.We concluded that NMOS is more sensitive to PMOS when in the condition of outside-the well strike;but the SEU sensitivity of inside-the-well NMOS and PMOS need be ascertained at the concrete conditions.When the two device at same technology in Deep submicron stages.
领 域: [电子电信]