作　　者： ; ; ; ; ;

机构地区： 深圳大学材料学院深圳市特种功能材料重点实验室

出　　处： 《功能材料》 2011年第B02期102-105,共4页

摘　　要： 采用ECR微波等离子体增强化学气相沉积的方法于C2H2/H2/Ar2等离子环境中在单晶Si(111)晶面上制备了不同厚度的DLC膜样品,研究了薄膜的厚度随沉积时间的变化及薄膜的硬度、内应力随厚度的变化关系。结果表明,在沉积时间变化范围内,厚度与沉积时间基本呈线性关系,沉积速率可达80nm/min;制备态样品存在的内应力先随厚度增加而增加,当薄膜内应力超过某临界值时将通过表面崩裂达到应力松弛效果,XRD测得基底Si(111)峰位偏移先随厚度增加而增加,随后变化趋于平缓,表明薄膜表面崩裂后内应力维持在一定水平,但薄膜的硬度测量值受到表面崩裂程度影响。 In this paper, serials of DLC films on single crystalline Si （111） substrates with different thickness were prepared by ECR microwave plasma enhanced chemical vapor deposition method in C2H2/H2/Ar2 plasma environment. The variation of thickness with deposition time and the thickness dependence of hardness,internal stress of films were investigated. It was showed that within selected time range, the thickness changes linear with deposition time and the deposition rate could be up to 80nm/min. The internal stress in as-deposited films increased firstly with thickness. Surface cracks for stress relaxation appear when the internal stress exceeds one critical value. The XRI） results showed the shift of the substrate Si（111） peak increased firstly with film thickness,and then the change trend to stable,means the internal stress will keep in a certain level after the appearance of surface cracks. However,the hardness value was affected by the surface cracks of the films.

关 键 词： 膜 内应力

领　　域： [理学] [理学]