作　　者： ; ; ; ; ; ;

机构地区： 华南师范大学

出　　处： 《华南师范大学学报（自然科学版）》 1999年第3期99-107,共9页

摘　　要： ＭＯＣＶＤ是一门制造化合物半导体器件的关键技术－ 本文综合分析了现代ＭＯＣＶＤ 技术的基本原理、特点及实现这种技术的设备的现状及其发展－ 重点讨论了能实现衬底温度、衬底表面反应源流均匀性的立式高速涡轮转盘ＭＯＣＶＤ技术－ Modern MOCVD technology and its development abstract metalorgainc chemical vepor deposition (MOCVD) has been a key technology in manufacturing compound semiconductor devices. In this paper, the recent development of modern MOCVD equipment with sophisticated process control, reliable and readily available on industrial scale, together with its characteristics and the related principles underneath are described. The vertical high speed disk reactor technology meeting the requirements of both a uniform reactant flow over substrate and a uniform substrate temperature is specially focused. The development of MOCVD and its application in the future are also discussed.

关 键 词： 技术 有机金属化合物 气相外延 衬底

领　　域： [电子电信]