作　　者： ; ;

机构地区： 华中理工大学光电子工程系

出　　处： 《华中理工大学学报》 1999年第8期90-92,共3页

摘　　要： 研究了直接耦合混合应变量子阱 Ｓ Ｏ Ａ 的噪声特性．实验测定 Ｓ Ｏ Ａ 在 １３０ ｍ Ａ 偏置电流下的噪声指数为 ７．７ ｄ Ｂ，表明应变量子阱结构改善了 Ｓ Ｏ Ａ 的噪声性能．理论分析指出，通过消除 Ｓ Ｏ Ａ 的剩余反射，其噪声性能可以得到进一步的改善． The noise figure of semiconductor optical amplifier (SOA) of strained multiple quantum well (MQW) has been studied in the paper. 7.7dB noise figure of SOA coupled with fiber directly in both ends under 130mA bias current shows that the noise figure is improved by strained quantum well structure. The experimental result is explained theoretically. The theoretical analysis shows that the noise figure of SOA can be further improved by reducing residual reflectivity.

关 键 词： 半导体光放大器 应变量子阱 噪声指数

领　　域： [电子电信] [电子电信]