作　　者： ; ; ; ; ;

机构地区： 深圳大学物理科学与技术学院

出　　处： 《深圳大学学报（理工版）》 2011年第1期84-88,共5页

摘　　要： 采用离子束溅射技术,溅射不同面积比例的Bi/Te二元复合靶,制备Bi2Te3热电薄膜,所制备的薄膜Bi∶Te原子比接近2∶3.X射线衍射测量结果显示,薄膜的主要衍射峰与Bi2Te3标准衍射峰相同,在(015)晶面上择优选向明显,存在少量的Bi和[Bi,Te]杂质峰.霍尔系数测试及Seebeck系数测量结果表明,薄膜都为n型半导体薄膜,电导率量级为105Sm-1,电学性能良好.在不同条件下制备的薄膜Seebeck系数最大值为-168μVK-1,最小值为-32μVK-1.其中,Bi∶Te原子比为0.69,退火温度为300℃的薄膜功率因子最大,达1.1×10-3Wm-1K-2. The Bi2Te3 thin films were prepared by ion beam sputtering from a Bi/Te fan-shaped compound target. The stoichiometries of all the samples approach the ratio of 2∶3. The XRD results indicate that the major diffraction peaks of the film match with those of Bi2Te3. The film growth exhibits preferred orientation at（015） phase and several Bi,[Bi,Te]impurity peaks are observed. Hall and Seebeck coefficient measurement reveals that all the samples are n-type with conductivity of 105 Sm-1. This confirms that the samples have nice thermoelectrically properties. The samples seebeck coefficients,with maximum of -168 μVK-1 and minimum of -32 μVK-1,are obtained from various preparation conditions. Among them,the sample annealed at 300 ℃ with stoichiometry of 0.69 has the highest Power Factor of 1.1×10-3 Wm-1K-2.

关 键 词： 凝聚态物理 离子束溅射 薄膜 热电材料 晶体结构 电学性能 热处理

领　　域： [电子电信] [理学] [理学] [理学]