作　　者： ; ;

机构地区： 厦门大学物理与机电工程学院物理学系

出　　处： 《发光学报》 1999年第1期22-24,共3页

摘　　要： 研究了无序ＧａＩｎＰ样品的温度依赖关系．在低温ＰＬ谱中，谱线呈单峰结构．随着温度从１５Ｋ升高到２５０Ｋ，谱线半宽从１６ｍｅＶ增大到３１ｍｅＶ，并且发生红移（５２ｍｅＶ），同时强度减小了两个数量级．对实验结果的拟合表明，在两个温度区存在着两个不同的激活能．温度小于１００Ｋ，激活能为４ｍｅＶ；温度大于１００Ｋ，激活能变为３５ｍｅＶ．我们认为低温温度行为由带边载流子的热离化伴随的无辐射跃迁所控制。 The integrated photoluminescence(PL) intensity of disordered Ga 0.52 In 0.48 P samples grown by metalorganic vapor phase epitaxy(MOVPE) have been measured as a function of temperature. The fitting to the integrated intensity shows two activation energies in two different temperature regions. Below 100K, the activation energy is about 4meV; above 100K, the activation energy is 35meV. We conclude that the low temperature PL behaviour is likely controlled by carriers thermalization from spatial fluctuations of the band edges followed by non radiative recombination. The high temperature PL behaviour is suspected to be dominated by a nonradiative path whose characteristic activation energy and transition probability depends upon the degree of sublattice ordering.

关 键 词： 光致发光 有序度 族 半导体 镓铟磷 温度

领　　域： [电子电信] [理学] [理学]