作　　者： ;

机构地区： 韩山师范学院物理与电子工程系

出　　处： 《太阳能学报》 2010年第9期1146-1149,共4页

摘　　要： 以直流反应磁控溅射方法作为制备手段,选择Ti为靶材,以氩气作为工作气体、氮气为反应气体,在Si(111)基底上制备太阳光谱选择性吸收薄膜TiN,使之具有较好的光谱选择吸收特性。研究发现:在其它工艺参数保持不变的情况下,溅射气压在0.35～1.50Pa范围内,都能制备出(200)择优取向的立方相TiN。而当溅射气压为0.35Pa时沉积的薄膜致密、均匀,色泽金黄,膜厚为132nm,结晶性最好,电阻率最低为33.8μΩ·cm(接近块体氮化钛电阻率)。在可见-近红外光区(波长400～1000nm)的平均吸收率α=0.83,最高红外反射率R=0.90。通过对膜层结构、膜厚、吸收率及反射率的分析,制备的TiN薄膜光谱选择性吸收特性良好,具有很高的应用价值。可用于太阳集热器的吸热表面,并可直接作为光热转换建筑材料。 TiN solar spectrally selective absorbing thin film with good spectrum absorbing selectivity was prepared by DC magnatron sputtering using Ti as target material and Argon as working gas, on Si（ 111 ） substrate. Research showed： that when keeping other technique parameter constant, with sputtering air pressure varied 0.35-1. SPa, cubic phase TiN thin films with a （ 2 0 0 ） preferred orientation were Synthesized ; and thin film prepared with a sputtering air pressure of 0.3SPa, is compact and uniform, with a golden color and a film thickness of 132nm, which shows the best crystallinity, least resistivity of 33.8Ω·cm （close to bulk resistivity of TIN）, with average absorptivity a 0. 83 of visible and near infrared （wavelength ranges 400-1000nm）, and maximum reflectivity R of near infrared at 0.90. Through analysis of film structure, film thickness, absorptivity and reflectivity, TiN thin film prepared with a sputtering air pressure of 0.35Pa, has good spectrum absorbing selectivity, and therefore has high application potential of solar collector or solar thermal conversion building material directly.

关 键 词： 太阳光谱选择性吸收薄膜 磁控溅射 氮化钛 吸收率 反射率

领　　域： [一般工业技术]