作　　者： ; ; ; ; ;

机构地区： 韩山师范学院物理与电子工程系

出　　处： 《物理学报》 2010年第10期7378-7382,共5页

摘　　要： 利用等离子体增强化学气相沉积技术,在高氢稀释条件下,研究不同激发频率对纳米晶硅薄膜生长特性的影响.剖面透射电子显微镜(TEM)分析结果显示,不同激发频率下制备的纳米晶硅薄膜晶化区均呈锥状结构生长,但13.56MHz激发频率下制备的纳米晶硅薄膜最初生长阶段存在非晶态孵化层,即纳米晶硅薄膜的形成经历了由非晶态孵化层到晶态结构层的转变.而高激发频率(40.68MHz)下硅纳米晶则能直接在非晶态衬底上生长形成.Raman谱和红外吸收谱测量结果表明高激发频率(40.68MHz)下制备的纳米晶硅薄膜不但具有较高的晶化率,而且具有较低的氢含量和较小的微结构因子。 Nanocrystalline silicon films were prepared from SiH4 highly diluted with hydrogen by plasma enhanced chemical vapor deposition.The influence of excitation frequency on their growth properties was investigated.The cross-section transmisson electron microscopy images show that all the films grow with certain fastigiated structure in the crystalline region.However,the films deposited at 13.56 MHz undergo a transition from amorphous incubation layer to crystalline structure.In contrast,for the films deposited at a high excitation frequency（40.68 MHz）,nanocrystalline silicon grains can directly grow on the amorphous substrates.Furthermore,the results of Raman spectra and Fourier transform infrared spectroscopy manifest that the nanocrystalline silicon films deposited at high excitation frequency（40.68 MHz） possess high crystalline fraction,low hydrogen content and small microstructure factor.

关 键 词： 等离子体增强化学气相沉积 高氢稀释 纳米晶硅

领　　域： [化学工程]