作　　者： ; ; ; ; ; ;

机构地区： 深圳大学物理科学与技术学院

出　　处： 《功能材料》 2010年第A02期239-242,共4页

摘　　要： 采用离子束溅射的方法在玻璃衬底上制备CdS多晶薄膜,研究了沉积过程中基底温度(100～400℃)与薄膜厚度(35～200nm)对其微结构与光电性能的影响。结果表明,不同基底温度下制备的CdS薄膜均属于六方相多晶结构且具有(002)择优取向生长特征;随着基底温度的升高,(002)特征衍射峰强度增加,半高宽变小相应薄膜结晶度增大,有利于颗粒的生长;分析CdS薄膜的光谱图线可知,薄膜在可见光区平均透射率高于75%,光学带隙值随着基底温度升高而增大(2.33～2.42eV)且薄膜电阻高达109Ω;在基底温度为400℃条件下制备不同厚度的CdS薄膜,发现(50～100nm)较薄的CdS薄膜具有较为明显的六方相CdS多晶薄膜结构、较优光学性能和高电阻值,满足CIS基太阳电池中缓冲层材料的基本要求。 Polycrystalline CdS thin films were prepared on BK7 glass substrates by ion beam sputtering deposition.The influence of the substrate temperatures（100-400℃） and thicknesses（35-200nm） on the structural,optical and electrical properties of CdS thin films was investigated.X-ray diffraction（XRD） analysis revealed that CdS thin films present the preferential（002） orientation of hexagonal phase and the characteristic peak intensity of CdS（002） increases which indicates an improvement in the crystallinity of CdS thin films with the increase of substrate temperature.The average film optical transmittance of the films is over 75% in the visible region and the optical band gap increases from 2.32 to 2.42eV when the substrate temperature elevated.The electrical sheet resistance of all the CdS thin films reaches up to 109Ω.Then,the investigation of CdS thin films with different thicknesses prepared at the substrate temperature of 400℃ shows that the thinner CdS films（50-100nm） also have a preferable performance,which is good enough for the buffer layer materials of CIS solar cells.

关 键 词： 薄膜 离子束溅射 微结构 光电性能

领　　域： [动力工程及工程热物理] [一般工业技术]