作　　者： ; ; ; ; ;

机构地区： 深圳大学光电工程学院光电子器件与系统教育部重点实验室

出　　处： 《光谱学与光谱分析》 2010年第10期2616-2619,共4页

摘　　要： 文章以MoO3为空穴注入层,NPB为空穴传输层,改变发光/电子传输层Alq3的厚度,考察了器件电学和光学性能的变化。结果表明,随着Alq3层增加厚度,器件的电流逐步减小,由此获得Alq3薄膜的电场分布情况;器件发光光谱有少量红移,但长波端明显展宽,短波端强度下降。该文拟合了器件电致发光谱,与实验曲线吻合较好。同时拟合结果也表明,干涉效应主要影响光谱在长波端的强度分布,发光区域分布决定光谱在短波端的强度分布。 The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied,where MoO3,NPB,and Alq3 were used as hole injector,hole transporter,and emitter/electron transporter,respectively.By increasing the thickness of Alq3 layer from 20 to 100 nm,the device current decreased gradually,and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range.The authors simulated the EL spectra using the photoluminescence （PL） spectra of Alq3 as Alq3 intrinsic emission,which coincided with the experimental EL spectra well.The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra,and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.

关 键 词： 有机发光二极管 发光层厚度 电致发光光谱 干涉效应 发光区域

领　　域： [机械工程] [理学] [理学]