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多晶硅中硼含量的密闭消解-ICP-AES法测定
Determination of Boron in Polycrystalline Silicon by Closed Vessel Heating Digestion Coupled with Inductively Coupled Plasma Atomic Emission Spectrometry

作  者: ; ; ;

机构地区: 华南师范大学化学与环境学院

出  处: 《分析测试学报》 2010年第9期962-965,共4页

摘  要: 采用恒压密闭消解的方法分解多晶硅样品,电感耦合等离子体原子发射光谱测定多晶硅样品中的硼含量。探讨了酸及络合剂的类型与用量对硼含量测定的影响,优化后的实验条件为:消解体系为2 mL HF+2 mL H2O+0.6 mL HNO3,络合剂为0.30 mL甘露醇溶液(2.5 g/L),稀释剂为0.3 mol/L的硝酸。在最佳实验条件下,硼元素的回收率为91%~95%,相对标准偏差均小于5.0%。 In this paper,a closed vessel heating digestion method was used to dissolve polycrystalline silicon and an inductively coupled plasma atomic emission spectrometry(ICP-AES) was used to determine the content of boron in polycrystalline silicon.The type and amount of acid and chelating agents were investigated and optimized.The optimum experimental conditions were as follows:2 mL HF+2 mL H2O+0.6 mL HNO3 as digestion reagents,0.30 mL mannitol solution(2.5 g/L) as complexing agent and 0.3 mol/L nitric acid as thinner.Under the optimized conditions,the recoveries of boron were in the range of 91%-95% and the relative standard deviations were less than 5.0%.

关 键 词: 电感耦合等离子体原子发射光谱 多晶硅 甘露醇

领  域: [理学] [理学] [理学] [理学]

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