作　　者： ; ;

机构地区： 厦门大学物理与机电工程学院物理学系

出　　处： 《厦门大学学报（自然科学版）》 1999年第3期362-365,共4页

摘　　要： 对无序和有序ＧａＩｎＰ２样品分别作了变温和变激发功率密度光致发光谱的测量．无序样品表现为与激发功率密度无关的单谱峰结构，在不同温度区有不同的激活能．有序样品则表现为双峰结构，其中高能端发光峰强度随温度升高先增强而后热猝灭． Temperature dependent and excitation intensity dependent photoluminescence spectra of both disordered and ordered GaInP 2 are measured. The disordered sample is characterized by its single peak photoluminescence spectrum, which is excitation intensity independent and has different activation energy at different temperature region, while the ordered sample shows double peaks structure. As the temperature increased, the intensity of high energy peak increased anomalously at first and quenches afterwards. The experimental phenomena are reasonably explained in terms of lattice ordering and orientation superlattice model.

关 键 词： 有序 无序 半导体 光致发光谱 镓铟磷化合物

领　　域： [电子电信] [理学] [理学]