作　　者： ; ; ; ; ; ;

机构地区： 吉林师范大学信息技术学院

出　　处： 《光电子．激光》 2009年第12期1589-1591,共3页

摘　　要： 在空穴传输层(HTL)和发光层(EML)间插入4,4-N,N′-二咔唑基联苯(CBP)超薄层,制备了结构为ITO/NPB/CBP(xnm)/CBP:Ir(ppy)3/BCP/Alq3/LiF/Al有机电致磷光器件。与未插入CBP超薄层的器件相比,CBP超薄层的引入可以有效阻挡Ir(ppy)3的三线态能量通过Dexter能量转移到HTL的NPB中,减少无辐射能量损失,提高了器件发光效率。调整CBP薄层的厚度,当x为3nm时,器件的效率提高幅度最大,从x为0nm时的9.0cd/A提高到16.9cd/A。 The improved organic electrophosphorescence devices（PhOLEDs） are fabricated by inserting an ultrathin CBP layer as triple exciton block layer at the interface between hole transport layer（HTL） and emitting layer（EML）,and their electrical and emitting properties are investigated.The PhOLEDs have the ITO anode/NPB/CBP（x nm）/CBP：Ir（ppy）3/BCP/Alq3/LiF/Al cathode structure.For the PhOLEDs with 2 nm CBP ultrathin layer,the maximum efficiency is 13.1 cd/A at 8 V.Compared with the device without CBP ultrathin layer,the inserted device has a slightly higher current efficiency.It is suggested that Dexter energy transfer of triplet energy from Ir（ppy）3 to NPB is eliminated by CBP ultrathin layer,which improves the device performance.By adjusting the thickness of CBP layer,a device with the maximum current efficiency of 16.9 cd/A is obtained when x is 3.0 nm,while the efficiency of device without CBP is only 9.0 cd/A.

关 键 词： 电致磷光器件 超薄层 三线态 效率

领　　域： [电子电信]