机构地区: 暨南大学理工学院物理学系
出 处: 《光电子.激光》 2010年第5期672-674,共3页
摘 要: 制备了简单结构的有机发光二极管(OLED)ITO/NPB/Alq3/Al/Ag。实验结果表明,快速蒸镀法制备的Ag阴极越厚,器件性能越差,而慢速蒸镀200nmAg阴极时器件性能也较差。在Alq3与Al阴极之间插入BCP/C60/LiF隔离层后,即使快速蒸镀法制备的Ag厚达280nm,器件的最大电流密度、最大亮度和最大电流效率仍分别高达248.6mA/cm2、5380.7cd/m2和3.52cd/A。隔离层不仅保护NPB和Alq3基本不被玻璃化,还很好地与Alq3和Al阴极匹配,大大提高了器件性能。 Organic light-emitting diodes(OLEDs) with a structure of ITO/NPB/Alq3/Al/Ag are prepared.The experimental results show that when Ag is deposited rapidly and the Ag is thicker,the device performance is worse.And when a 200 nm Ag is deposited slowly,the device performance is also poor.However,after inserting a BCP/C60/LiF spacer layer between Alq3 and Al cathode,even if there is 280 nm Ag deposited rapidly,the maximum current density,maximum brightness and maximum current efficiency of the device are still as high as 248.6 mA/cm2,5 380.7 cd/m2 and 3.52 cd/A,respectively.The spacer layer protects NPB and Alq3,matches very well with Alq3 and Al cathode,and significantly improves the device performance.
领 域: [电子电信]