作　　者： ;

机构地区： 韩山师范学院物理与电子工程系

出　　处： 《韩山师范学院学报》 2010年第3期35-37,42,共4页

摘　　要： 以直流反应磁控溅射方法在Si(111)基底上制备薄膜TiN.研究发现:在保持其他工艺参数不变的条件下,溅射气压在0.3～1.3 Pa范围内,薄膜的主要成分是(111)择优取向的立方相TiN.当溅射气压为0.5 Pa时,沉积的薄膜膜层致密均匀,色泽金黄,膜厚为115.8 nm,结晶性能好.在可见光区半透明而在红外光区呈高反射,红外反射率为90%,具有良好的太阳光谱选择性. The DC reactive magnetron sputtering method in Si（111）substrates were prepared by thin-film TiN.The results were found：In keeping other parameters the same conditions,the sputtering pressure to 0.3-1.3Pa within the film the main component is（111）preferred orientation of the cubic phase TiN.When the sputtering pressure is 0.5Pa,the deposition of thin film coating dense uniform,golden color,thickness of 115.8nm,the crystallization is in good performance. Translucent in the visible light in the infrared light area was highly reflective,infrared reflectivity of 90%,has a good selectivity of the solar spectrum.

关 键 词： 磁控溅射 氮化钛 反射率

领　　域： [一般工业技术]