作　　者： ;

机构地区： 佛山科学技术学院理学院光电子与物理学系

出　　处： 《材料导报（纳米与新材料专辑）》 2010年第1期259-262,共4页

摘　　要： 采用金属有机化学汽相沉积(MOCVD)的方法生长出高质量的InGaN合金薄膜,并对InGaN合金薄膜的光电性能进行高能粒子辐照损伤测试,用室温下的光致发光对InGaN合金薄膜的少数载流子寿命进行间接测量,结果显示,高In组分InGaN合金薄膜具有很好的晶体结构质量,其位错密度均没有超过5×10^(10)cm^(-2)。在辐照损伤强度超过常用太阳能电池材料GaAs和GaInP损伤强度极限2个数量级以上时,InGaN合金仍然具有良好的光电性能,说明InGaN合金是非常适合制作抗超高辐照强度的太阳能电池材料。研究分析表明,InGaN合金具有较高的抗辐照性能是由这种材料的本质属性决定的。 The high quality InGaN alloy films are grown by metal organic chemical vapor deposits （MOCVD） ,and the optical and electrical properties of these alloy films are tested by high energy particle irradiation damage, and the minority carrier lifetime of these alloy films is measured indirectly by photoluminescence at room temperature. The experimental results reveal that the rich In content InGaN alloy films have very high crystal structure quality and those dislocation density have not exceed 5×10^10cm^-2. Even under the condition of the irradiation damage intensity exceed over 2 orders of damage limits of the ordinary solar cells materials GaAs and Gain_P, the InGaN alloys behave the favorable optical and electrical properties, which explains the InGaN alloys are well suitable for making super anti-irradiation intensity solar cells materials. After research and analysis, it is pointed out that the lnGaN alloys possess the super anti-irradiation properties which are decided by their intrinsic property.

关 键 词： 合金 抗辐照性能 太阳能电池材料

领　　域： [电子电信]