作　　者： ; ; ; ;

机构地区： 南开大学物理学院

出　　处： 《物理化学学报》 2010年第6期1617-1622,共6页

摘　　要： 采用离子束溅射技术制备出TiO2/ITO、Zn2+掺杂的TiO2(TiO2-Zn)/ITO和TiO2/ZnO/ITO薄膜,采用表面敏化技术和旋转涂膜法,制备出(1,10-邻菲咯啉)2-2-(2-吡啶基)苯咪唑钌混配配合物(Rup2P)表面敏化的TiO2基复合薄膜Rup2P/TiO2/ITO、Rup2P/TiO2-Zn/ITO和Rup2P/TiO2/ZnO/ITO.表面光电压谱(SPS)结果发现:敏化后的TiO2基薄膜在可见区(400-600nm)产生SPS响应;TiO2基薄膜的能带结构不同,其在400-600nm和350nm处的SPS响应的峰高比不同.利用电场诱导表面光电压谱(EFISPS),测定TiO2基薄膜和表面敏化TiO2基复合薄膜各种物理参数,并确定其能带结构.分析可知,表面敏化TiO2基复合薄膜在400-600nm的SPS响应峰主要源于Rup2P分子的中心离子Ru4d能级到配体1,10-邻菲咯啉π*1和2-(2-吡啶基)苯咪唑π*2能级的跃迁;TiO2中Zn2+掺杂能级有利于Ru4d能级到配体π*1和π*2跃迁的光生电子向TiO2-Zn导带的注入;TiO2/ZnO异质结构有利于光生电子向ITO表面的转移,从而导致可见光(400-600nm)SPS响应增强以及光电转换效率的提高. TiO2/ITO,TiO2-Zn/ITO and TiO2/ZnO/ITO films were prepared by ion-beam sputtering,and then further surface-sensitized with the Ru（phen）2（PIBH） complex（Rup2P） of Rup2P/TiO2/ITO,Rup2P/TiO2-Zn/ITO,and Rup2P/ TiO2/ZnO/ITO by the spin-coating method.Surface photovoltage spectra（SPS） of the films revealed that SPS responses were present at 400-600 nm after surface-sensitization and the SPS intensity ratios between the peaks at 400-600 nm and 350 nm were different because of the different energy band structures in the TiO2-based films.The physical parameters and energy band structures of TiO2-based and Rup2P modified TiO2-based films were determined by electric field induced surface photovoltage spectroscopy（EFISPS）.We found that the 400-600 nm SPS peaks of the Rup2P modified films came from the Ru 4d to phen π＊1 and PIBH π＊2 electron transitions.The Zn2＋ doping level in TiO2-Zn benefits the injection of photogenerated electrons from the ligand levels to the conduction band.The TiO2/ZnO heterostructure favors electron transfer to the surface of ITO,which can enhance the SPS response in the visible light region（400-600 nm） as well as the photoelectron transformation efficiency.

关 键 词： 表面敏化 光致界面电荷转移

领　　域： [理学] [理学]