作　　者： ; ; ;

机构地区： 华南师范大学物理与电信工程学院

出　　处： 《广东化工》 2010年第4期34-36,共3页

摘　　要： 运用固体与分子经验电子理论(EET),计算了Al-Cu-Mg合金时效过程中产生的GPBZ和S"相的价电子结构以及a-Al/GPBZ和a-Al/S"两相之间的界面电子结构。结果表明:亚稳定S"相的总体键强高于GPBZ,对合金基体具有沉淀强化的作用;同时a-Al/S"两相界面非常连续,对合金基体具有界面强化效果。反映了从GPBZ向S"相转变的相变过程,与实验结果一致。 The valence electronic structures of the GPB zone and S ＂ phase and interface electronic structure of a-Al/GPBZ and a-Al/S ＂ of A1-Cu-Mg alloy in aging processing were calculated using the Empirical Electron Theory （EET） in Solid and Molecules, the results suggested that the total bonding intensity of S ＂ phase was stronger than that of GPBZ, which had precipitation strengthening effect on matrix in alloy; meanwhile, the interface of a-Al/S ＂ was very continuous, which had interface strengthening effect on matrix in alloy. The processing of phase transformation from GPBZ to S ＂ phase was indicated in aging processing, consistent with the result of experiment.

关 键 词： 合金 界面电子结构

领　　域： [金属学及工艺] [一般工业技术] [金属学及工艺]