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射频溅射功率对AZO薄膜结构及光电特性和热稳定性的影响
Influence of Sputtering Power on the Structure,Optoelectronic Properties and Thermal Stability of ZnO:Al Films

作  者: ; ; ; ; ; ; ;

机构地区: 深圳大学材料学院深圳市特种功能材料重点实验室

出  处: 《发光学报》 2010年第2期235-238,共4页

摘  要: 采用射频磁控溅射法,在玻璃基片上制备了ZnO:Al(AZO)透明导电薄膜。用X射线衍射(XRD)仪、紫外-可见分光光度计、方块电阻测试仪和台阶仪对不同溅射功率下Al掺杂ZnO薄膜的结晶、光学、电学性能、沉积速率以及热稳定性进行了研究。研究结果表明:不同溅射功率下沉积的AZO薄膜具有六角纤锌矿结构,均呈c轴择优取向;(002)衍射峰强和薄膜的结晶度随溅射功率的提高逐渐增强;随溅射功率的提高,AZO薄膜的透射率有所下降,但在可见光(380~780nm)范围内平均透射率仍>80%;薄膜的方块电阻随溅射功率的增加逐渐减小;功率为160~200W时,薄膜的热稳定性最好,升温前后方块电阻变化率为13%。 Al-doped ZnO (AZO) film has high transmittance in the visible region,low resistance and better stability,so AZO films have been actively investigated for potential applications in a variety of opto-electronic devices,such as solar cells,flat panel displays,transparent heat mirrors and organic light-emitting diodes.The properties of ZnO film are critically dependent on various deposition parameters,such as radio-frequency power,working gas pressure,and substrate temperature,and so on,Among these factors,the study of influence of rf power on film properties is important to build on the understanding of the relationship between film properties and process conditions. In this paper,using ZnO mixed with Al2O3(2%) as target,thin AZO films were prepared on glass substrates by radio frequency magnetron sputtering at different rf powers of 40,80,120,160 and 200 W.The influence of sputtering power on structure,optoelectronic properties,thickness and thermal stability of thin AZO films were investigated by XRD,UV-Vis spectrophotometer,four point probe and instrument level.It was found that the AZO thin films with hexagonal wurtzite structure have a (002) c-axis preferential orientation,and the intensity of the (002) peak increase as the increase of RF power.For all of the AZO thin films,the average transmittance of the visible light is above 80%.The sheet resistance decreases as the increase of RF power.The films deposited at 160 and 200 W show good thermal stability,which change of sheet resis-tance before and after heat treatment is about 13%.This high thermal stability indicated that AZO films can replace thin Sn-doped In2O3 (ITO) films applying in the touch screen.

关 键 词: 磁控溅射 薄膜 射频功率 热稳定性

领  域: [理学] [理学] [理学] [理学]

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