作　　者： ; ; ; (汪顺婷）;

机构地区： 广东工业大学材料与能源学院

出　　处： 《半导体技术》 2010年第4期383-387,共5页

摘　　要： MOS结构电容由于其结构简单并且和CMOS工艺兼容,是进行实时工艺监控和测试工艺参数的重要测试结构。采用通过对相同工艺不同厂家生产的两批电容样品进行高频C-V测试,编程计算提取器件相关参数。通过对比同一厂家样品中相同面积MOS电容和不同面积电容参数的分布特性,以及不同厂家样品各个参数的差异,对CMOS相关工艺进行评价。为工艺过程以及相关设计的改进提供参考依据。 The structure of MOS capacitor is simple and compatible with CMOS technology, it is an important test structure to monitor real-time process and test the process parameters. Two groups of MOS capacitors produced by different manufacturers but with the same process were used as high-frequency C-V test samples. The device parameters were calculated by programming. By comparing the distribution properties of parameters of the same and different area of MOS capacitors produced by the same manufacturer, as well as differences between two groups of samples produced by different manufacturers, the evaluation for the related CMOS process is given. It provides a reference for related improvements in the CMOS technology and design

关 键 词： 电容 界面态 高频 测试

领　　域： [电子电信]