作　　者： ; ;

机构地区： 华中理工大学光电子工程系

出　　处： 《红外与激光工程》 1998年第6期31-33,47,共4页

摘　　要： 以行波半导体光放大器速率方程为基础，采用传输矩阵方法，对锥形结构半导体光放大器的增益和饱和特性进行理论研究。讨论了不同锥形长度，不同结构时的增益和饱和特性差异。理论研究表明，锥形结构能改善半导体光放大器的偏振灵敏度。在同一锥度下，长锥形长度能提高饱和增益，降低偏振灵敏度。在进行半导体光放大器有源条结构设计时要综合考虑锥度及锥形长度的影响，以实现结构优化。 The theory research on the gain and saturation characteristics of a semiconductor laser amplifier of laterally tapered active layer was done with transfer matrix method (TMM) in the base of rate equation. The differences of gain and saturation characteristics had been discussed in different slope length and different structure. The theory research shows that the laterally tapered structure can improve the polarization sensitivity of semiconductor laser amplifier. Saturation gain increases and polarization sensitivity decreases in condition of longer cone length remaining the same cone degree. To realize the optimal structure, the cone degree and cone length must be considered synthetically in the structure design of a semiconductor laser amplifier.

关 键 词： 半导体光放大器 特性分析 结构设计

领　　域： [电子电信]