作　　者： ; ; ; ; ;

机构地区： 南京航空航天大学机电学院

出　　处： 《电加工与模具》 2009年第6期9-13,共5页

摘　　要： 硅通孔技术是MEMS封装和垂直集成传感器阵列实现电气互联的重要途径之一,采用微细电火花的方法可实现硅通孔加工的高深宽比,并满足表面完整性要求。设计了具有单脉冲检测功能的微能脉冲电源,将厚180μm、电阻率0.01Ω.cm N型单晶硅工件倒置在数控微位移平台上,通过微细电火花的方法加工出边长约为200μm方形硅阵列通孔。该方法加工过程与材料晶向无关、热影响区小、加工精度高,可实现工件电极的微量蚀除和工具电极的少、无损耗,以达到硅通孔的高效、精密、微细和低成本加工。 Through-Silicon-Via （TSV） technique is an important approach to realize electric interconnected in MEMS package and Vertical Integration Sensor Array （VISA）. Micro-EDM can solve the technique difficulty in the machining of TSV with high-aspect-ratio and surface quality. With our own design single pulse generator and high precision NC micro displacement machining platform, we succeed to get 200 IX m square TSV on N-type monocrystal Silicon workpiece whose thickness is 180 μm and resistivity 0.01 Ω· cm by Micro-EDM. In TSV, the workpiece electrode micro machining is not affected by the crystallographic orientation, the heat affected zone is small and the precision is high. So, we can realize the micro-processing of tool electrode and its wear is little or zero. In this way, the effective, precise, minute machining with low cost is achieved.

关 键 词： 阵列电极 微细电火花 单脉冲电源 硅通孔

领　　域： [金属学及工艺]