作　　者： ; ; ; ; ; ;

机构地区： 武汉大学物理科学与技术学院声光材料与器件教育部重点实验室

出　　处： 《武汉大学学报（理学版）》 2009年第5期539-543,共5页

摘　　要： 用固相反应和快速退火冷却法制备了纯的BiFeO3(BFO)陶瓷和15%Ho掺杂的Bi0.85Ho0.15FeO3(BHFO)陶瓷,研究了室温下陶瓷的晶格结构及其铁电、介电、漏电和磁性能.结果表明,Ho掺杂有助于减少BiFeO3陶瓷中的杂相,改善其铁电、介电、漏电和磁性能.与BFO陶瓷相比,BHFO陶瓷具有典型的电滞回线;当电场强度为150 kV/cm时,其2Pr(剩余极化值)为15μC/cm2.同时,BHFO具有比BFO显著增大的介电常数和明显降低的介电损耗.磁性能测试表明,BHFO陶瓷表现出弱的铁磁性. Pure BiFeO3 （BFO） and 15% Ho-doped Bi0.85Ho0.15FeO3 （BHFO） ceramics were prepared by solid state reaction followed immediately by quenching process, and the structure, dielectric, ferroelectric, leakage conduction and magnetic properties were studied. The results show that Ho substitution can reduce the miscellaneous phase in the BiFeO3 ceramics, and the ferroelectric, dielectric, leakage current and magnetic properties are improved. Compared with the BFO, BHFO ceramics exhibit a typical ferroelectric hysteresis loop with a 2Pr of 15 μC/cm^2 at an applied electric field of 150 kV/cm. The dielectric measurements show that the dielectric constant and dielectric losses of BHFO ceramics are significant larger and smaller, respectively, than those of the BFO. Moreover, a weak ferromagnetism was observed in the BHFO ceramics by magnetic measurements.

关 键 词： 多铁陶瓷 掺杂 铁电性 介电性 磁性

领　　域： [电子电信]