作　　者： ; ; ;

机构地区： 广东工业大学材料与能源学院

出　　处： 《广东化工》 2009年第9期164-166,共3页

摘　　要： 采用射频磁控反应溅射技术,在不同的Ar∶O2条件下制备Er2O3薄膜,然后把样品分别在600、700和800℃退火60min,研究分析了Ar∶O2比例和退火温度对样品的结构和介电性能的影响。结果表明:600℃以上退火处理后,Er2O3薄膜从非晶态转变为多晶,使薄膜的介电常数和击穿场强明显增加,漏电流密度减小,但不同的退火温度对这些性能的影响不大,退火温度的提高会在Si和Er2O3薄膜的界面形成类SiO2过渡层。但Ar∶O2比对薄膜的结晶性能和介电性能影响不大,但工作气体中较少的Ar会导致在Si和Er2O3薄膜的界面形成类SiO2过渡层。 Erbium oxide film was prepared by reactive dc magnetron sputtering at various Ar/O, flux ratio. The dielectrics constant, leakage current density and breakdown electric field of the samples were studied. The effects of annealed temperature and Ar/O2 ratio on the structure and dielectric characterization of Er203 films were discussed. The results showed that the as-deposited films were the amorphous phase, whereas the films after annealing at 600℃ were poly-crystallized phase. The dielectrics constant and the breakdown field strength of the Er2O3 film increase, whereas leakage current density decreases after annealing at 600℃. The SiO2 interracial layer may format between Er2O3 and the silicon substrate when Ar/O2 ratio decreased or annealing temperature increased.

关 键 词： 电子材料 介电性能 磁控反应溅射 薄膜 高 薄膜

领　　域： [化学工程]