作　　者： ;

机构地区： 五邑大学

出　　处： 《光子学报》 2009年第8期2019-2023,共5页

摘　　要： 采用直流磁控溅射的方法在Al2O3陶瓷管、硅基片上溅射制备了二氧化钛(TiO2)纳米薄膜材料.将薄膜样品放入管式退火炉中分别在500℃,700℃和1100℃温度下退火.由于退火温度的不同,薄膜的晶体结构、晶粒尺寸、晶向以及气敏特性都有所不同.利用X射线衍射(XRD)技术和薄膜气敏特性测试,分析了退火温度对薄膜气敏特性的影响.分析结果表明退火温度在500℃时,呈现锐钛矿结构,薄膜具有很好的选择性、很短的反应(恢复)时间.对TiO2薄膜表面进行修饰,发现此TiO2薄膜的最佳工作温度为370℃左右.薄膜的气敏机理也得到了讨论. Nanosized TiO2 thin films were prepared by the method of DC magnetron sputtering,and the films were deposited on alumina tubes and silicon substrates. After the deposition, the films were annealed at 500℃, 700℃ and 1 100℃ in a muffle respectively. The film properties such as crystal structure, grain size, phase and gas sensitivity varied on account of the annealing condition. X-ray diffraction （XRD） and gas sensing measurements were carried out to find out the relation between sensitivity and annealing temperature. Anatase occurs at annealing temperature 500℃. Sensitivity is the highest with wonderful selectivity and shortest response（recover） time for the anatase phase. After modified the surface of TiO2 thin film,it could be concluded that the best operating temperature for the devices is 370℃. The mechanism of the gas sensing properties was also discussed.

关 键 词： 二氧化钛纳米薄膜 退火温度 乙醇气敏特性

领　　域： [电子电信]