机构地区: 深圳大学计算机与软件学院
出 处: 《电子学报》 2009年第7期1393-1399,共7页
摘 要: 本文研究了一个采用标准0.35μm CMOS工艺制造的新型高能物理粒子轨迹追踪器.这个新型的追踪器运用CMOS有源像素传感器技术(CMOS Monolithic Active Pixel Sensors,MAPS)将信号的探测与处理电路集成在一起,在像素的内部实现了相关双次采样操作(Correlated Doubled Sampling,CDS).实验芯片包含一个128行×32列的像素矩阵,其中,像素的大小为25×25μm2.通过采用放射源55Fe的测定,得到像素的等效输入随机噪声(Temporal Noise)仅为12个电子而固定噪声(Fixed Pattern Noise,FPN)仅为4个电子.传感器的电荷-电压转换系数(Charge-to-Voltageconversion Factor,CVF)为60μV/e-.测试中,芯片的信号读取速度达到了12μs/帧. Fabricated in a standard 0.35μm CMOS process,a new type detector designed for high energy particle tracking was studied in this work. The detector is based on monolithic CMOS active pixel sensor (MAPS) technology. Using standard CMOS process, signal processing circuits are integrated on the same substrate as the sensors and correlated double sampling (CDS) operation is realized inside pixel. The prototype consists of a 128 × 32 pixel array and pixel pitch is 25 × 25 square of micrometer. Measured by a radioactive source^55Fe, the temporal noise is only about 12 electrons and the residual offset is only about 4 electrons. The charge-to-voltage conversion factor (CVF) is about 60μV/e- . During the tests, readout speed reaches 12μ/frame.
关 键 词: 高能物理粒子轨迹追踪器 有源像素传感器 相关双次采样 随机噪声 固定噪声
领 域: [自动化与计算机技术] [自动化与计算机技术]