作　　者： ; ; ; (王质武）;

机构地区： 深圳大学光电工程学院光电子器件与系统教育部重点实验室

出　　处： 《压电与声光》 2009年第4期544-546,共3页

摘　　要： 采用在AlN缓冲层后原位沉积SiN掩膜层,然后横向外延生长GaN薄膜。通过该法在硅衬底上获得了1.7μm无裂纹的GaN薄膜,并在此基础上外延生长出了GaN基发光二极管(LED)外延片,其外延片的总厚度约为1.9μm。采用高分辨率双晶X-射线衍射(DCXRD)、原子力显微镜(AFM)测试分析。结果表明,GaN薄膜(0002)面的半峰全宽(FWHM)降低到403 arcsec,其表面平整度得到了很大的改善;InGaN/GaN多量子阱的界面较平整,结晶质量良好。光致发光谱表明,GaN基LED峰值波长为469.2 nm。 The SiN mask layer which is deposited on A1N buffer layer in situ is used to grow GaN films laterally. The crack-free GaN film with thickness over 1.7 micron is grown on Si（111） substrate successfully. On the basis of it, the GaN-based LEDs with the thickness of 1.9 μm have been prepared epitaxiatly. The microstructures of samples are analyzed by atomic force microscopy （AFM） and high-resolution double crystal X-ray diffraction （DCXRD）. These results indicate that the full-width at half-maximum （FWHM） on （0002） plane of GaN film is decreased to 403 arcsec, and the surface quality has been improved. The crystal quality of InGaN/GaN multiple quantum wells （MQWs） is preferable, and the interface of MQWs is level, too. The peak wavelength of GaN-based LED on silicon substrate is 469.2 nm, based on the Photoluminescence （PL） spectra.

关 键 词： 硅衬底 薄膜 发光二极管

领　　域： [理学] [理学] [电子电信]